High temperature anneal with improved substrate support
US7704327B2 · kind B2 · utility
12Cited by
39References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2002 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | Feb 21, 2023 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4585
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.