Deposition method for high-k dielectric materials
US7704895B2 · kind B2 · utility
1Cited by
1References
10Claims
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Key dates
| Filing date | Apr 2, 2008 |
| Grant date | Apr 27, 2010 |
| Priority date | — |
| Expiry date | May 25, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02189
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a high-k dielectric material on a semiconductor substrate is disclosed. The method includes applying a chemical bath to a surface of a substrate, rinsing the surface, applying a co-reactant bath to the surface of the substrate, and rinsing the surface. The chemical bath includes a metal precursor which includes at least a hafnium compound, an aluminium compound, a titanium compound, zirconium compound, a scandium compound, a yttrium compound or a lanthanide compound.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.