Three-dimensional imaging using electron beam activated chemical etch
US7709792B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Dec 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3174
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.