Cap layers including aluminum nitride for nitride-based transistors
US7709859B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 12, 2007 |
| Grant date | May 4, 2010 |
| Priority date | — |
| Expiry date | Sep 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High electron mobility transistors are provided that include a non-uniform aluminum concentration AlGaN based cap layer having a high aluminum concentration adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. High electron mobility transistors are provided that include a cap layer having a doped region adjacent a surface of the cap layer that is remote from the barrier layer on which the cap layer is provided. Graphitic BN passivation structures for wide bandgap semiconductor devices are provided. SiC passivation structures for Group III-nitride semiconductor devices are provided. Oxygen anneals of passivation structures are also provided. Ohmic contacts without a recess are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.