Tuneable semiconductor device with discontinuous portions in the sub-collector

US7709930B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Andreas D. Stricker · South Burlington, US
• David C. Sheridan · Williston, US
• Jae-Sung Rieh · Seoul, KR
• Gregory G. Freeman · Hopewell Junction, US
• Steven H. Voldman · South Burlington, US
• Stephen A. St. Onge · Colchester, US

Key dates

• Filing date: Apr 22, 2004
• Grant date: May 4, 2010
• Expiry date: Jul 28, 2024

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/142

Abstract

Disclosed is a method of forming a semiconductor structure that includes a discontinuous non-planar sub-collector having a different polarity than the underlying substrate. In addition, this structure includes an active area (collector) above the sub-collector, a base above the active area, and an emitter above the base. The distance between the discontinuous portions of the discontinuous sub-collector tunes the performance characteristics of the semiconductor structure. The performance characteristics that are tunable include breakdown voltage, unity current gain cutoff frequency, unity power gain cutoff frequency, transit frequency, current density, capacitance range, noise injection, minority carrier injection and trigger and holding voltage.