Plasma processing apparatus with insulated gas inlet pore
US7712435B2 · kind B2 · utility
404Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Oct 1, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32559
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.