Field angle sensor fabricated using reactive ion etching
US7713755B1 · kind B1 · utility
13Cited by
3References
10Claims
0Family size
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Key dates
| Filing date | Dec 11, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Dec 11, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
Abstract
A high-amplitude magnetic angle sensor is described along with a process for its manufacture. A thin tantalum nitride hard mask, used to pattern the device, is left in place within the completed structure but, by first converting most of it to tantalum oxide, its effect on current shunting is greatly reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.