Inventor · Gilroy, CA, US

Witold Kula

101Patents
21h-index
45Co-inventors
90Inventor score

Filing activity: Jul 12, 2000 → Jun 13, 2022

Most-cited inventions

PatentTitleAreaCited byStatus
US8852760B2 Free layer with high thermal stability for magnetic device applications by insertion of a boron dusting layer Emerging Cross-Sectional Technologies 94 Active
US7750421B2 High performance MTJ element for STT-RAM and method for making the same Electricity 88 Active
US7863060B2 Method of double patterning and etching magnetic tunnel junction structures for spin-transfer torque MRAM devices Electricity 81 Active
US8722543B2 Composite hard mask with upper sacrificial dielectric layer for the patterning and etching of nanometer size MRAM devices Emerging Cross-Sectional Technologies 75 Active
US7936027B2 Method of MRAM fabrication with zero electrical shorting Electricity 74 Active
US7696551B2 Composite hard mask for the etching of nanometer size magnetic multilayer based device Emerging Cross-Sectional Technologies 71 Active
US8592927B2 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications Electricity 67 Active
US8138561B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM Electricity 53 Active
US9466789B2 Method of making a high thermal stability reference structure with out-of-plane anisotropy for magnetic device applications Emerging Cross-Sectional Technologies 52 Active
US8749003B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same Electricity 51 Active
US8492169B2 Magnetic tunnel junction for MRAM applications Electricity 49 Active
US8080432B2 High performance MTJ element for STT-RAM and method for making the same Electricity 45 Active
US9006704B2 Magnetic element with improved out-of-plane anisotropy for spintronic applications Electricity 45 Active
US8541855B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications Physics 41 Active
US8946834B2 High thermal stability free layer with high out-of-plane anisotropy for magnetic device applications Emerging Cross-Sectional Technologies 38 Active
US8871365B2 High thermal stability reference structure with out-of-plane aniotropy to magnetic device applications Emerging Cross-Sectional Technologies 27 Active
US8609262B2 Structure and method to fabricate high performance MTJ devices for spin-transfer torque (STT)-RAM application Emerging Cross-Sectional Technologies 27 Active
US9472752B2 High thermal stability reference structure with out-of-plane anisotropy for magnetic device applications Emerging Cross-Sectional Technologies 27 Active
US8923038B2 Memory cells, semiconductor device structures, memory systems, and methods of fabrication Electricity 26 Active
US7672093B2 Hafnium doped cap and free layer for MRAM device Emerging Cross-Sectional Technologies 25 Active
US8921961B2 Storage element for STT MRAM applications Electricity 21 Active
US9048411B2 Multilayers having reduced perpendicular demagnetizing field using moment dilution for spintronic applications Electricity 18 Active
US8372661B2 High performance MTJ element for conventional MRAM and for STT-RAM and a method for making the same Electricity 17 Active
US7205164B1 Methods for fabricating magnetic cell junctions and a structure resulting and/or used for such methods Electricity 14 Expired
US7713755B1 Field angle sensor fabricated using reactive ion etching Electricity 13 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.