Methods of forming capacitors
US7713813B2 · kind B2 · utility
8Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 31, 2005 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Mar 11, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention includes methods in which silicon is removed from titanium-containing container structures with an etching composition having a phosphorus-and-oxygen-containing compound therein. The etching composition can, for example, include one or both of ammonium hydroxide and tetra-methyl ammonium hydroxide. The invention also includes methods in which titanium-containing whiskers are removed from between titanium-containing capacitor electrodes. Such removal can be, for example, accomplished with an etch utilizing one or more of hydrofluoric acid, ammonium fluoride, nitric acid and hydrogen peroxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.