Method for producing bonded wafer
US7713842B2 · kind B2 · utility
20Cited by
4References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | Sep 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for producing a bonded wafer by bonding a wafer for active layer to wafer for support layer and then thinning the wafer for active layer, a terrace grinding for forming a terrace portion is carried out prior to a step of exposing the oxygen ion implanted layer to thereby leave an oxide film on a terrace portion of the wafer for support layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.