Patent · US Active

Semiconductor devices and methods of manufacture thereof

US7713866B2 · kind B2 · utility

0Cited by

9References

21Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Bum Ki Moon · Oshima, JP
Danny Pak-Chum Shum · Poughkeepsie, US
Moosung Chae · Poughkeepsie, US

Key dates

Filing date	Nov 21, 2006
Grant date	May 11, 2010
Priority date	—
Expiry date	Apr 23, 2027

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Semiconductor devices and methods of manufacture thereof are disclosed. A preferred embodiment comprises a method of forming a barrier layer. The method of forming the barrier layer includes providing a workpiece, forming a first material layer over the workpiece, the first material layer comprising a nitride-based metal compound. A second material layer is formed over the first material layer. The second material layer comprises Ta or Ti. The barrier layer comprises the first material layer and at least the second material layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.