Strained metal nitride films and method of forming
US7713868B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 30, 2007 |
| Grant date | May 11, 2010 |
| Priority date | — |
| Expiry date | May 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a strained metal nitride film and a semiconductor device containing the strained metal nitride film. The method includes exposing a substrate to a gas containing a metal precursor, exposing the substrate to a gas containing a nitrogen precursor activated by a plasma source at a first level of plasma power and configured to react with the metal precursor with a first reactivity characteristic, and exposing the substrate to a gas containing the nitrogen precursor activated by the plasma source at a second level of plasma power different from the first level and configured to react with the metal precursor with a second reactivity characteristic such that a property of the metal nitride film formed on the substrate changes to provide the strained metal nitride film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.