Patent · US Active

Thermal isolation of phase change memory cells

US7714315B2 · kind B2 · utility

16Cited by
9References
16Claims
0Family size

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Key dates

Filing dateMay 19, 2006
Grant dateMay 11, 2010
Priority date
Expiry dateDec 19, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10N70/884

Abstract

A memory includes an array of resistive memory cells, bit lines between rows of the memory cells for accessing the memory cells, and a conductive plate coupled to each of the memory cells.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.