Method of controlling the breakdown voltage of BSCRs and BJT clamps

US7714355B1 · kind B1 · utility

Assignee

• NATIONAL SEMICONDUCTOR CORPORATION · US

Inventors

• Vladislav Vashchenko · Palo Alto, US
• Alexei Sadovnikov · San Jose, US
• Peter J. Hopper · San Jose, US
• Andy Strachan · Santa Clara, US

Key dates

• Filing date: Dec 20, 2005
• Grant date: May 11, 2010
• Expiry date: Jan 19, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/137

Abstract

In a BSCR or BJT ESD clamp, the breakdown voltage and DC voltage tolerance are controlled by controlling the size of the collector of the BJT device by masking part of the collector.