Patent · US Active

Tantalum sputtering target and method for preparation thereof

US7716806B2 · kind B2 · utility

13Cited by
12References
11Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 19, 2006
Grant dateMay 18, 2010
Priority date—
Expiry dateMar 18, 2029

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T29/49988
  • WIPO fieldMaterials, metallurgy
  • WIPO sectorChemistry

Abstract

Provided is a tantalum sputtering target having a crystal structure in which the (222) orientation is preferential from a position 10% of the target thickness toward the center face of the target, and a manufacturing method of a tantalum sputtering target, including the steps of forging and recrystallization annealing, and thereafter rolling, a tantalum ingot or billet having been subject to melting and casting, and forming a crystal structure in which the (222) orientation is preferential from a position of 10% of the target thickness toward the center face of the target. As a result, evenness (uniformity) of the film is enhanced, and quality of the sputter deposition is improved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.