Self-passivating plasma resistant material for joining chamber components
US7718029B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2006 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Jul 28, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32467
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide a robust bonding material suitable for joining semiconductor processing chamber components. Other embodiments provide semiconductor processing chamber components joined using a bonding material having metal filler disposed in an adhesive layer. Other embodiments include methods for manufacturing a semiconductor processing chamber component having a bonding material that includes metal filled disposed in an adhesive layer. The metal filler is suitable for reacting with halogen containing plasmas such that a halogen based metal layer is formed on the exposed portion of the bonding material upon exposure to the plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.