Li Xu
35Patents
14h-index
31Co-inventors
81Inventor score
Filing activity: Jul 9, 1999 → Aug 28, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6352081B1 | Method of cleaning a semiconductor device processing chamber after a copper etch process | Emerging Cross-Sectional Technologies | 217 | Expired |
| US7696117B2 | Method and apparatus which reduce the erosion rate of surfaces exposed to halogen-containing plasmas | Chemistry; Metallurgy | 119 | Active |
| US8034734B2 | Semiconductor processing apparatus which is formed from yttrium oxide and zirconium oxide to produce a solid solution ceramic apparatus | Emerging Cross-Sectional Technologies | 87 | Active |
| US6942929B2 | Process chamber having component with yttrium-aluminum coating | Emerging Cross-Sectional Technologies | 65 | Expired |
| US6508911B1 | Diamond coated parts in a plasma reactor | Electricity | 52 | Expired |
| US8129029B2 | Erosion-resistant plasma chamber components comprising a metal base structure with an overlying thermal oxidation coating | Emerging Cross-Sectional Technologies | 38 | Active |
| US8758858B2 | Method of producing a plasma-resistant thermal oxide coating | Emerging Cross-Sectional Technologies | 37 | Active |
| US7479304B2 | Gas distribution plate fabricated from a solid yttrium oxide-comprising substrate | Emerging Cross-Sectional Technologies | 34 | Expired |
| US9012030B2 | Process chamber component having yttrium—aluminum coating | Emerging Cross-Sectional Technologies | 28 | Active |
| US7371467B2 | Process chamber component having electroplated yttrium containing coating | Emerging Cross-Sectional Technologies | 27 | Expired |
| US8623527B2 | Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide | Emerging Cross-Sectional Technologies | 25 | Active |
| US6623595B1 | Wavy and roughened dome in plasma processing reactor | Electricity | 20 | Expired |
| US8067067B2 | Clean, dense yttrium oxide coating protecting semiconductor processing apparatus | Emerging Cross-Sectional Technologies | 20 | Active |
| US9051219B2 | Semiconductor processing apparatus comprising a solid solution ceramic formed from yttrium oxide, zirconium oxide, and aluminum oxide | Emerging Cross-Sectional Technologies | 15 | Active |
| US8016948B2 | Method of removing contaminants from a coating surface comprising an oxide or fluoride of a group IIIB metal | Emerging Cross-Sectional Technologies | 13 | Active |
| US6476398B1 | Beam automation in charged-particle-beam systems | Electricity | 10 | Expired |
| US8008208B2 | Method of cleaning and forming a negatively charged passivation layer over a doped region | Emerging Cross-Sectional Technologies | 8 | Active |
| US7547569B2 | Method for patterning Mo layer in a photovoltaic device comprising CIGS material using an etch process | Emerging Cross-Sectional Technologies | 5 | Active |
| US7833401B2 | Electroplating an yttrium-containing coating on a chamber component | Emerging Cross-Sectional Technologies | 5 | Active |
| US8168462B2 | Passivation process for solar cell fabrication | Emerging Cross-Sectional Technologies | 4 | Active |
| US7846264B2 | Cleaning method used in removing contaminants from a solid yttrium oxide-containing substrate | Emerging Cross-Sectional Technologies | 4 | Active |
| US7718029B2 | Self-passivating plasma resistant material for joining chamber components | Electricity | 3 | Active |
| US6413389B1 | Method for recovering metal from etch by-products | Emerging Cross-Sectional Technologies | 3 | Expired |
| US10840112B2 | Coated article and semiconductor chamber apparatus formed from yttrium oxide and zirconium oxide | Chemistry; Metallurgy | 2 | Active |
| US8367924B2 | Buried insulator isolation for solar cell contacts | Emerging Cross-Sectional Technologies | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.