Bonded wafer and method of producing the same
US7718507B2 · kind B2 · utility
2Cited by
2References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2007 |
| Grant date | May 18, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.