Patent · US Active

Method for setting a reference potential of a current sensor and arrangement for determining the reference potential of a power semiconductor device

US7719254B2 · kind B2 · utility

0Cited by

5References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thorsten Meyer · Regensburg, DE
Mathias von Borcke · Munich, DE
Markus Winkler · Munich, DE

Key dates

Filing date	Aug 9, 2007
Grant date	May 18, 2010
Priority date	—
Expiry date	Apr 23, 2028

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for setting a reference potential of a current sensor in a power semiconductor device is disclosed. On the basis of a specific geometry and a typical two-dimensional potential distribution of the power semiconductor device, a plurality of tapping points is predetermined on an area of the power semiconductor device. On the basis of the specific geometry of the power semiconductor device, a line course between the tapping points and a measuring point for measuring a potential average value is determined and realized. Respective potential values are detected at the tapping points and fed to the measuring point. The potential average value is determined at the measuring point. The potential of the current sensor is set to the potential average value thus determined.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.