Photoactive adhesion promoter in a slam
US7723008B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 22, 2005 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jun 14, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor process technique to help reduce semiconductor process effects, such as undesired line edge roughness, insufficient lithographical resolution, and limited depth of focus problems associated with the removal of a photoresist layer. More particularly, embodiments of the invention use a photoacid generator (PAG) material in conjunction with a sacrificial light absorbing material (SLAM) to help reduce these and other undesired effects associated with the removal of photoresist in a semiconductor manufacturing process. Furthermore, embodiments of the invention allow a PAG to be applied in a semiconductor manufacturing process in an efficient manner, requiring fewer processing operations than typical prior art techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.