Patent · US Active

Method for producing and cleaning surface-mountable bases with external contacts

US7723158B2 · kind B2 · utility

2Cited by

3References

37Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Gutt · Taufkirchen, DE
Sokratis Sgouridis · Annenheim, AT

Key dates

Filing date	Oct 25, 2006
Grant date	May 25, 2010
Priority date	—
Expiry date	Oct 25, 2026

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/19042
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a method for producing bases with external contacts for surface mounting on circuit mounts, bases with external contacts are electrodeposited on semiconductor wafers or semiconductor chips. Subsequently, electrodeposited bases with external contacts are heat treated on the semiconductor wafers or the semiconductor chips at temperatures below the melting temperature of the deposited contact base material. Thereafter, a so-called RTP process is carried out in the form of a high-temperature interval in which the melting temperature is reached. Subsequently, the surfaces of the bases with external contacts are wet etched, the overall method being terminated by a cooling and drying operation. The bases with external contacts thus produced can be reliably surface mounted on circuit mounts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.