CMOS device comprising MOS transistors with recessed drain and source areas and a SI/GE material in the drain and source areas of the PMOS transistor

US7723174B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andrew Waite · Beverly, US
• Andy Wei · Queensbury, US
• Gunter Grasshoff · Radebeul, DE

Key dates

• Filing date: May 12, 2009
• Grant date: May 25, 2010
• Expiry date: May 12, 2029

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

The present disclosure relates to semiconductor devices and a process sequence in which a semiconductor alloy, such as silicon/germanium, may be formed in an early manufacturing stage, wherein other performance-increasing mechanisms, such as a recessed drain and source configuration, possibly in combination with high-k dielectrics and metal gates, may be incorporated in an efficient manner while still maintaining a high degree of compatibility with conventional process techniques.