Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same

US7723180B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Xiying Chen · San Jose, US
• Chuanbin Pan · Sunnyvale, US
• Tanmay Kumar · Pleasanton, US
• Er-Xuan Ping · Boise, US

Key dates

• Filing date: May 27, 2008
• Grant date: May 25, 2010
• Expiry date: Jul 8, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8845

Abstract

A method of making a non-volatile memory device includes forming a first electrode, forming a steering element, forming at least one feature, forming a carbon resistivity switching material on at least one sidewall of the at least one feature such that the carbon resistivity switching material electrically contacts the steering element, and forming a second electrode.