Method for manufacturing semiconductor device having recess gate
US7723189B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 29, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Dec 21, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a semiconductor device having recess gates includes forming an etch stop film on a semiconductor substrate; forming an etch stop film pattern selectively exposing the semiconductor substrate by patterning the etch stop film; forming a semiconductor layer on the semiconductor substrate; forming a hard mask film pattern exposing regions, for forming trenches for recess gates, on the semiconductor substrate; removing the semiconductor layer using the hard mask film pattern as a mask until the etch stop film pattern is exposed; forming the trenches for recess gates by removing the etch stop film pattern from the semiconductor substrate; and forming gate stacks, each of which is formed in the corresponding one of the trenches for recess gates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.