Integrated circuit long and short channel metal gate devices and method of manufacture
US7723192B2 · kind B2 · utility
12Cited by
5References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2008 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Jun 20, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for manufacturing an integrated circuit including a short channel (SC) device and a long channel (LC) device each overlaid by an interlayer dielectric. The SC device has an SC gate stack and the LC device initially has a dummy gate. In one embodiment, the method includes the steps of removing the dummy gate to form an LC device trench, and depositing metal gate material over the SC device and the LC device. The metal gate material contacts the SC gate stack and substantially fills the LC device trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.