Multilayer structure comprising a substrate and a layer of silicon and germanium deposited heteroepitaxially thereon, and a process for producing it

US7723214B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventor

• Peter Storck · Mehring, DE

Key dates

• Filing date: Oct 31, 2005
• Grant date: May 25, 2010
• Expiry date: Jul 3, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02532
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A multilayer structure, comprises a substrate and a layer of silicon and germanium (SiGe layer) deposited heteroepitaxially thereon having the composition Si1-xGex and having a lattice constant which differs from the lattice constant of silicon, and a thin interfacial layer deposited on the SiGe layer and having the composition Si1-yGey, which thin interfacial layer binds threading dislocations, and at least one further layer deposited on the interfacial layer.