Method to provide a higher reference voltage at a lower power supply in flash memory devices
US7724075B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2006 |
| Grant date | May 25, 2010 |
| Priority date | — |
| Expiry date | Apr 2, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/30
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A fast reference circuit having active feedback includes a bias supply circuit and a variable divider circuit connected by an active feedback path to the bias supply circuit, and a comparator circuit connected to the variable divider circuit, the bias supply circuit, and a reference node of the variable divider circuit. In one embodiment, a start-up circuit initially discharges a potential at the bias supply and comparator circuits, then initializes a reference voltage at the reference node at about zero volts to improve repeatability. In one embodiment, the variable voltage divider comprises an impendence that is trimmed based on a sheet resistance of a process used to fabricate the fast reference circuit, and further comprises a variable reference current circuit coupled to the impedance and configured to generate a current having a value based on a desired reference voltage and to conduct the current through the impedance, thereby generating the reference voltage associated therewith. The comparator circuit is configured to compare the bias supply voltage to the reference voltage, and drive the bias supply and the variable divider circuit in response to the comparison, thereby q…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.