Electron beam processing for mask repair
US7727681B2 · kind B2 · utility
6Cited by
22References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2004 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Jun 17, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31744
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Transmissivity is restored to a gallium stained substrate by directing an electron beam to the substrate in the presence of an etching gas. For higher concentrations of implanted gallium, the transparency can be substantially restored without reducing the thickness of the substrate. For lower doses of implanted gallium, the transmission is restored to 100%, although the thickness of the substrate is reduced. The invention is suitable for use in the repair of photolithography masks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.