Sonic irradiation during wafer immersion
US7727863B1 · kind B1 · utility
21Cited by
12References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Oct 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2885
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Sonic radiation is applied to a wafer portion of the planar surface of a rotating, tilted wafer as it is being immersed into a liquid treatment bath. The portion includes the leading outer edge region of the wafer. The area of the wafer portion is significantly less than the total surface area of the planar wafer surface. Power density is minimized. As a result, bubbles are removed from the wafer surface and cavitation in the liquid bath is avoided. In some embodiments, the liquid bath is de-gassed to inhibit bubble formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.