Nitrogen polar III-nitride heterojunction JFET
US7728355B2 · kind B2 · utility
7Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2007 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | May 10, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
Abstract
An N-polar III-nitride heterojunction JFET which includes a P-type III-nitride body under the gate electrode thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.