Semiconductor devices including schottky diodes with controlled breakdown
US7728402B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2006 |
| Grant date | Jun 1, 2010 |
| Priority date | — |
| Expiry date | Mar 30, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor layer having a first conductivity type, a metal contact on the semiconductor layer and forming a Schottky junction with the semiconductor layer, and a semiconductor region in the semiconductor layer. The semiconductor region and the semiconductor layer form a first p-n junction in parallel with the Schottky junction. The first p-n junction is configured to generate a depletion region in the semiconductor layer adjacent the Schottky junction when the Schottky junction is reversed biased to thereby limit reverse leakage current through the Schottky junction. The first p-n junction is further configured such that punch-through of the first p-n junction occurs at a lower voltage than a breakdown voltage of the Schottky junction when the Schottky junction is reverse biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.