Patent · US Active

Cr-capped chromeless phase lithography

US7732102B2 · kind B2 · utility

0Cited by

0References

15Claims

0Family size

Assignee

Freeescale Semiconductor, Inc. · US

Inventors

Jonathan Cobb · Austin, US
Bernard J. Roman · Austin, US
Wei E. Wu · Austin, US

Key dates

Filing date	Jul 14, 2005
Grant date	Jun 8, 2010
Priority date	—
Expiry date	Mar 8, 2028

Classification

Technology area (CPC G)Physics
CPC primaryG03F1/34
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A photolithographic mask is adapted for use in imparting a pattern to a substrate. The pattern comprises a plurality of features. At least one of the plurality of features (201) is implemented in the mask as a phase shifting structure (205) with a unitary layer of opaque material (207) disposed thereon. The mask is utilized to impart the pattern to a layer over a semiconductor substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.