Methods of fabricating semiconductor devices and structures thereof
US7732315B2 · kind B2 · utility
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1References
25Claims
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Key dates
| Filing date | Sep 4, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Aug 8, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating semiconductor devices and structures thereof are disclosed. In a preferred embodiment, a method of manufacturing a semiconductor device includes providing a semiconductor wafer, forming a first insulating material over the semiconductor wafer, and forming a plurality of first features and a plurality of second features in the first insulating material. The plurality of first features is removed, leaving an unfilled pattern in the first insulating material. The unfilled pattern in the first insulating material is filled with a second insulating material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.