Simplified pitch doubling process flow
US7732343B2 · kind B2 · utility
545Cited by
94References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device comprises patterning a layer of photoresist material to form a plurality of mandrels. The method further comprises depositing an oxide material over the plurality of mandrels by an atomic layer deposition (ALD) process. The method further comprises anisotropically etching the oxide material from exposed horizontal surfaces. The method further comprises selectively etching photoresist material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.