Baosuo Zhou
36Patents
11h-index
37Co-inventors
71Inventor score
Filing activity: Sep 1, 2005 → Apr 27, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7732343B2 | Simplified pitch doubling process flow | Electricity | 545 | Active |
| US7393789B2 | Protective coating for planarization | Emerging Cross-Sectional Technologies | 86 | Expired |
| US7807575B2 | Methods to reduce the critical dimension of semiconductor devices | Electricity | 43 | Active |
| US9870899B2 | Cobalt etch back | Chemistry; Metallurgy | 30 | Active |
| US9679781B2 | Methods for integrated circuit fabrication with protective coating for planarization | Emerging Cross-Sectional Technologies | 25 | Active |
| US8338304B2 | Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices | Electricity | 23 | Active |
| US7902074B2 | Simplified pitch doubling process flow | Electricity | 19 | Active |
| US8852851B2 | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same | Electricity | 18 | Active |
| US8492278B2 | Method of forming a plurality of spaced features | Electricity | 16 | Active |
| US8980752B2 | Method of forming a plurality of spaced features | Electricity | 14 | Active |
| US8836083B2 | Methods to reduce the critical dimension of semiconductor devices and related semiconductor devices | Electricity | 11 | Active |
| US7659208B2 | Method for forming high density patterns | Electricity | 10 | Active |
| US7662718B2 | Trim process for critical dimension control for integrated circuits | Electricity | 8 | Active |
| US10784086B2 | Cobalt etch back | Chemistry; Metallurgy | 7 | Active |
| US9184159B2 | Simplified pitch doubling process flow | Electricity | 6 | Active |
| US8324107B2 | Method for forming high density patterns | Electricity | 6 | Active |
| US9003651B2 | Methods for integrated circuit fabrication with protective coating for planarization | Emerging Cross-Sectional Technologies | 5 | Active |
| US9761457B2 | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same | Electricity | 5 | Active |
| US7910483B2 | Trim process for critical dimension control for integrated circuits | Electricity | 5 | Active |
| US9330934B2 | Methods of forming patterns on substrates | Electricity | 4 | Active |
| US10096483B2 | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same | Electricity | 4 | Active |
| US8479384B2 | Methods for integrated circuit fabrication with protective coating for planarization | Emerging Cross-Sectional Technologies | 3 | Active |
| US8030217B2 | Simplified pitch doubling process flow | Electricity | 3 | Active |
| US9570320B2 | Method to etch copper barrier film | Electricity | 2 | Active |
| US10607844B2 | Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same | Electricity | 2 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.