Method for measuring a pattern dimension using a scanning electron microscope
US7732761B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2007 |
| Grant date | Jun 8, 2010 |
| Priority date | — |
| Expiry date | Nov 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24578
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
To provide a consistent, high-speed, high-precision measurement method based on an electron beam simulation by reflecting the apparatus characteristics of a CD-SEM in an electron beam simulation, the present invention discloses a method for measuring a measurement target pattern with a CD-SEM, the method comprising the steps of performing an electron beam simulation on various target pattern shapes, which is reflected apparatus characteristic and image acquisition conditions; creating SEM simulated waveforms; storing a combination of the created SEM simulated waveforms and pattern shape information corresponding to the created SEM simulated waveforms as a library; comparing an acquired actual electron microscope image with the SEM simulated waveforms; selecting the SEM simulated waveform that is most similar to the actual electron microscope image; and estimating the shape of the measurement target pattern from the pattern shape information corresponding to the selected SEM simulated waveform.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.