Methods for nanoscale feature imprint molding

US7736954B2 · kind B2 · utility

Assignee

• Sematech, Inc. · US

Inventors

• Muhammad Mustafa HUSSAIN · Hercules, US
• Naim Moumen · Walden, US
• Gabriel Gebara · Austin, US
• Ed Labelle · Austin, US
• Sidi Lanee · Austin, US
• Barry Sassman · Cedar Park, US
• Raj Jammy · Wappingers Falls, US

Key dates

• Filing date: Aug 28, 2006
• Grant date: Jun 15, 2010
• Expiry date: Oct 26, 2028

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/888
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

Methods for fabricating nanoscale features are disclosed. One technique involves depositing onto a substrate, where the first layer may be a silicon layer and may subsequently be etched. A second layer and third layer may be deposited on the etch first layer, followed by the deposition of a silicon cap. The second and third layer may be etched, exposing edges of the second and third layers. The cap and first layer may be removed and either the second or third layer may be etched, creating a nanoscale pattern.