Naim Moumen
39Patents
8h-index
74Co-inventors
74Inventor score
Filing activity: Aug 16, 2002 → Mar 14, 2016
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7736954B2 | Methods for nanoscale feature imprint molding | Emerging Cross-Sectional Technologies | 47 | Active |
| US7741188B2 | Deep trench (DT) metal-insulator-metal (MIM) capacitor | Emerging Cross-Sectional Technologies | 28 | Active |
| US9178036B1 | Methods of forming transistor devices with different threshold voltages and the resulting products | Electricity | 19 | Active |
| US7754594B1 | Method for tuning the threshold voltage of a metal gate and high-k device | Electricity | 16 | Active |
| US7691701B1 | Method of forming gate stack and structure thereof | Electricity | 13 | Active |
| US7125782B2 | Air gaps between conductive lines for reduced RC delay of integrated circuits | Electricity | 9 | Expired |
| US7682917B2 | Disposable metallic or semiconductor gate spacer | Electricity | 9 | Active |
| US6617085B1 | Wet etch reduction of gate widths | Electricity | 8 | Expired |
| US7498271B1 | Nitrogen based plasma process for metal gate MOS device | Electricity | 7 | Active |
| US8115097B2 | Grid-line-free contact for a photovoltaic cell | Emerging Cross-Sectional Technologies | 6 | Active |
| US6905976B2 | Structure and method of forming a notched gate field effect transistor | Emerging Cross-Sectional Technologies | 6 | Expired |
| US7947549B2 | Gate effective-workfunction modification for CMOS | Electricity | 5 | Active |
| US8053306B2 | PFET with tailored dielectric and related methods and integrated circuit | Electricity | 5 | Active |
| US8669466B2 | Grid-line-free contact for a photovoltaic cell | Emerging Cross-Sectional Technologies | 4 | Active |
| US8753936B2 | Changing effective work function using ion implantation during dual work function metal gate integration | Electricity | 4 | Active |
| US9564505B2 | Changing effective work function using ion implantation during dual work function metal gate integration | Electricity | 4 | Active |
| US8183642B2 | Gate effective-workfunction modification for CMOS | Electricity | 3 | Active |
| US7863123B2 | Direct contact between high-κ/metal gate and wiring process flow | Electricity | 3 | Active |
| US6987042B2 | Method of forming a collar using selective SiGe/Amorphous Si Etch | Electricity | 3 | Expired |
| US9461171B2 | Methods of increasing silicide to epi contact areas and the resulting devices | Electricity | 3 | Active |
| US8778750B2 | Techniques for the fabrication of thick gate dielectric | Electricity | 3 | Active |
| US7943453B2 | CMOS devices with different metals in gate electrodes using spin on low-k material as hard mask | Electricity | 2 | Active |
| US8575709B2 | High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereof | Electricity | 1 | Active |
| US9324896B2 | Thermal receiver for high power solar concentrators and method of assembly | Emerging Cross-Sectional Technologies | 1 | Active |
| US7495743B2 | Immersion optical lithography system having protective optical coating | Physics | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.