Method of making a semiconductor device with embedded stressor

US7736957B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Paul A. Grudowski · Austin, US
• Veeraraghavan Dhandapani · Round Rock, US
• Darren V. Goedeke · Pflugerville, US
• Voon-Yew Thean · Fishkill, US
• Stefan Zollner · Hopewell Junction, US

Key dates

• Filing date: May 31, 2007
• Grant date: Jun 15, 2010
• Expiry date: Mar 11, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822

Abstract

A method for forming a semiconductor device includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate; forming a gate electrode over the gate dielectric; forming an insulating layer over a sidewall of the gate electrode; defining source and drain regions in the semiconductor substrate adjacent to the insulating layer; implanting a dopant in the source and drain regions of the semiconductor substrate to form doped source and drain regions; forming a sidewall spacer adjacent to the insulating layer; forming a recess in the semiconductor substrate in the source and drain regions, wherein the recess extends directly underneath the spacer a predetermined distance from a channel regions; and forming a stressor material in the recess. The method allows the stressor material to be formed closer to a channel region, thus improving carrier mobility in the channel while not degrading short channel effects.