Method of forming a gate structure for a semiconductor device and method of forming a cell gate structure for a non-volatile memory device
US7736963B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2005 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Apr 18, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In an embodiment, a method of forming a gate structure for a semiconductor device includes forming a preliminary gate structure on a semiconductor substrate. The preliminary gate structure includes a gate oxide pattern and a conductive pattern sequentially stacked on the substrate. Then, a re-oxidation process is performed to the substrate having the preliminary gate structure using an oxygen radical including at least one oxygen atom, so that an oxide layer is formed on a surface of the substrate and sidewalls of the preliminary gate structure to form the gate structure for a semiconductor device. The thickness of the gate oxide pattern is prevented from increasing, and the quality of the oxide layer is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.