Method for forming a semiconductor device
US7736982B2 · kind B2 · utility
10Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 14, 2008 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Oct 14, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device includes providing a substrate having at least a gate positioned thereon, forming at least a recess in the substrate adjacent to the gate, performing a first selective epitaxial growth (SEG) process to form a first epitaxial layer in the recess, performing an etching process to remove a portion of the first epitaxial layer to expose the substrate, and performing a second SEG process to form a second epitaxial layer on the first epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.