Method for forming Ti film and TiN film, contact structure, computer readable storing medium and computer program
US7737005B2 · kind B2 · utility
4Cited by
4References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 8, 2005 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Apr 3, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A cleaning process is performed on the surface of a nickel silicide film serving as an underlayer. Then, a Ti film is formed to have a film thickness of not less than 2 nm but less than 10 nm by CVD using a Ti compound gas. Then, the Ti film is nitrided. Then, a TiN film is formed on the Ti film thus nitrided, by CVD using a Ti compound gas and a gas containing N and H.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.