Method of implanting a non-dopant atom into a semiconductor device
US7737009B2 · kind B2 · utility
12Cited by
11References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Jan 31, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/371
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an isolation trench structure is disclosed, the method includes forming an isolation trench in a semiconductor body associated with an isolation region, and implanting a non-dopant atom into the isolation trench, thereby forming a region to modify the halo profile in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.