Selective ruthenium deposition on copper materials
US7737028B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 2008 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Nov 29, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1089
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.