Patent · US Active

Method for forming a structure on a substrate and device

US7737049B2 · kind B2 · utility

2Cited by
23References
23Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 31, 2007
Grant dateJun 15, 2010
Priority date
Expiry dateNov 16, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/32139
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

In one aspect, a method of forming a structure on a substrate is disclosed. For example, the method includes forming a first mask layer and a second mask layer, modifying a material property in regions of the first and second mask layers, and forming the structure based on the modified regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.