Method for forming a structure on a substrate and device
US7737049B2 · kind B2 · utility
2Cited by
23References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2007 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Nov 16, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one aspect, a method of forming a structure on a substrate is disclosed. For example, the method includes forming a first mask layer and a second mask layer, modifying a material property in regions of the first and second mask layers, and forming the structure based on the modified regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.