Semiconductor device and method of forming the same
US7737505B2 · kind B2 · utility
0Cited by
5References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2007 |
| Grant date | Jun 15, 2010 |
| Priority date | — |
| Expiry date | Jan 3, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include, but is not limited to, a single crystal silicon diffusion layer, a polycrystal silicon conductor, and a diffusion barrier layer. The diffusion barrier layer separates the polycrystal silicon conductor from the single crystal silicon diffusion layer. The diffusion barrier layer prevents a diffusion of at least one of silicon-interstitial and silicon-vacancy between the single crystal silicon diffusion layer and the polycrystal silicon conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.