High rate atomic layer deposition apparatus and method of using
US7740704B2 · kind B2 · utility
41Cited by
8References
21Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 25, 2004 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Nov 28, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45574
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A processing system for performing atomic layer deposition (ALD) including a process chamber, a substrate holder provided within the process chamber, and a gas injection system configured to supply a first process gas and a second process gas to the process chamber. The gas injection system is configured to introduce the first process gas and the second process gas to the processing chamber at a first location and a second location, wherein at least one of the first process gas and the second process gas is alternatingly and sequentially introduced between the first location and the second location.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.