Copper alloy sputtering target process for producing the same and semiconductor element wiring
US7740721B2 · kind B2 · utility
11Cited by
8References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 19, 2004 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Jan 17, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
Provided is a copper alloy sputtering target containing 0.01 to (less than) 0.5 wt % of at least 1 element selected from Al or Sn, and containing Mn or Si in a total amount of 0.25 wtppm or less. The above copper alloy sputtering target allows the formation of a wiring material for a semiconductor element, in particular, a seed layer being stable, uniform and free from the occurrence of coagulation during electrolytic copper plating and exhibits excellent sputtering film formation characteristics. A semiconductor element wiring formed with this target is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.