Highly-selective metal etchants
US7741230B2 · kind B2 · utility
9Cited by
3References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2006 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Mar 28, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A highly selective metal wet etchant with an active ingredient comprising one or more types of molecules having two or more oxygen atoms is described. In one embodiment, the wet etchant is utilized to pattern a metal layer in a semiconductor structure. In another embodiment, a highly selective metal wet etchant with an active ingredient comprising one or more types of molecules having two or more oxygen atoms is used to pattern a metal gate electrode in a replacement gate processing scheme.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.