Programmable resistive RAM and manufacturing method
US7741636B2 · kind B2 · utility
8Cited by
194References
8Claims
0Family size
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Key dates
| Filing date | Jul 14, 2006 |
| Grant date | Jun 22, 2010 |
| Priority date | — |
| Expiry date | Apr 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/215
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Integrated circuit nonvolatile memory uses programmable resistive elements. In some examples, conductive structures such as electrodes are prepared, and the programmable resistive elements are laid upon the prepared electrodes. This prevents contamination of the programmable resistive elements from previous fabrication steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.